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IIIIIIIIIIIIIIIIIIIIIII II I I IIIIIIIIIIIIIIIIIIIIIII II I I III I I I I IIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIII II I I IIIIIIIIIIIIIIIIIIIIIII II I I IIIIIIIIIIIIIIIIIIIIIII II I I IIIIIIIIIIIIIIIIIIIIIII II I I IIIIIIIIIIIIIIIIIIIIIII II I I IIIIIIIIIIIIIIIIIIIIIII II I I III I I I II I I IIIIIIIIIIIIIIIIIIIIIII II I I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIIIIIII II I I IIIIIIIIIIIIIIIIIIIIIII II I I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII II I I III IIIIIIIIIIIIIIIIIIIIIII III I I I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII III I I IIIIIIIIIIIII II I I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII II I I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIIIII IIIIIIII I II I I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIII III I I I II IIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII II I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII II III I II IIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII II I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII I II III I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II III I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII II I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII
* * * * * * *
Preferred devices are Motorola recommended choices for future use and best overall value.
(c) Motorola, Inc. 1995 Motorola Bipolar Power Transistor Device Data
* These ratings are applicable when surface mounted on the minimum pad sizes recommended. (1) Pulse Test: Pulse Width 300 s, Duty Cycle 2%. (continued)
DPAK For Surface Mount Applications
Complementary Darlington Power Transistors
SEMICONDUCTOR TECHNICAL DATA
MOTOROLA
Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers.
OFF CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
THERMAL CHARACTERISTICS
MAXIMUM RATINGS
REV 1 Emitter Cutoff Current (VBE = 5 Vdc, IC = 0) Collector Cutoff Current (VCB = 100 Vdc, IE = 0) Collector Cutoff Current (VCE = 50 Vdc, IB = 0) Collector-Emitter Sustaining Voltage (1) (IC = 30 mAdc, IB = 0) Thermal Resistance, Junction to Ambient* Operating and Storage Junction Temperature Range Total Power Dissipation* @ TA = 25_C Derate above 25_C Total Power Dissipation @ TC = 25_C Derate above 25_C Base Current Collector Current -- Continuous Peak Emitter-Base Voltage Collector-Base Voltage Collector-Emitter Voltage
Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) Straight Lead Version in Plastic Sleeves ("1" Suffix) Lead Formed Version in 16 mm Tape and Reel ("T4" Suffix) Surface Mount Replacements for TIP110-TIP117 Series Monolithic Construction With Built-in Base-Emitter Shunt Resistors High DC Current Gain -- hFE = 2500 (Typ) @ IC = 2.0 Adc Complementary Pairs Simplifies Designs
Characteristic
Rating
Symbol
Symbol
TJ, Tstg
VCEO VCB
VEB IC
PD
IB PD
- 65 to + 150
MJD112 MJD117
1.75 0.014
Max
20 0.16
100
100
50
2 4
5
mAdc
Watts W/_C
Watts W/_C
Unit
Unit
Adc
Vdc
Vdc
Vdc
_C
SILICON POWER TRANSISTORS 2 AMPERES 100 VOLTS 20 WATTS
MINIMUM PAD SIZES RECOMMENDED FOR SURFACE MOUNTED APPLICATIONS
MJD112* PNP MJD117*
*Motorola Preferred Device
CASE 369A-13
CASE 369-07
Order this document by MJD112/D
NPN
0.190 4.826
Thermal Resistance, Junction to Case
RJC
RJA
71.4
6.25
_C/W
_C/W
0.165 4.191
Characteristic
v
v
VCEO(sus)
Symbol
ICBO
ICEO
IEBO
Min
100
--
--
--
Max
20
20
--
2
mAdc
Adc
Adc
Unit
Vdc
inches mm
1
0.243 6.172 0.063 1.6 0.118 3.0 0.07 1.8
t, TIME ( s)
IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIII III I I I III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII III I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I IIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII
MJD112 MJD117
*ELECTRICAL CHARACTERISTICS -- continued (TC = 25_C unless otherwise noted)
Characteristic Symbol Min Max Unit OFF CHARACTERISTICS - continued Collector-Cutoff Current (VCE = 80 Vdc, VBE(off) = 1.5 Vdc) (VCE = 80 Vdc, VBE(off) = 1.5 Vdc, TC = 125_C) Collector-Cutoff Current (VCB = 80 Vdc, IE = 0) Emitter-Cutoff Current (VBE = 5 Vdc, IC = 0) ICEX Adc -- -- -- -- 10 500 10 2 ICBO IEBO Adc mAdc ON CHARACTERISTICS DC Current Gain (IC = 0.5 Adc, VCE = 3 Vdc) (IC = 2 Adc, VCE = 3 Vdc) (IC = 4 Adc, VCE = 3 Vdc) hFE -- 500 1000 200 -- 12,000 -- Collector-Emitter Saturation Voltage (IC = 2 Adc, IB = 8 mAdc) (IC = 4 Adc, IB = 40 mAdc) VCE(sat) Vdc -- -- -- -- 2 3 4 Base-Emitter Saturation Voltage (IC = 4 Adc, IB = 40 mAdc) Base-Emitter On Voltage (IC = 2 Adc, VCE = 3 Vdc) VBE(sat) VBE(on) Vdc Vdc 2.8 DYNAMIC CHARACTERISTICS Current-Gain -- Bandwidth Product (IC = 0.75 Adc, VCE = 10 Vdc, f = 1 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 0.1 MHz) fT 25 -- MHz pF Cob * Pulse Test: Pulse Width
v 300 s, Duty Cycle v 2%.
MJD117 MJD112
-- --
200 100
RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS D1, MUST BE FAST RECOVERY TYPE, e.g.: 1N5825 USED ABOVE IB 100 mA MSD6100 USED BELOW IB 100 mA RB 51 D1 +4V 8k
VCC - 30 V
4
ts 2
VCC = 30 V IC/IB = 250
IB1 = IB2 TJ = 25C
TUT V2 APPROX +8 V 0 V1 APPROX -12 V tr, tf 10 ns DUTY CYCLE = 1%
RC SCOPE
60
1 0.8 0.6 0.4 PNP NPN 0.1
tf tr
25 s
td @ VBE(off) = 0 V
FOR td AND tr, D1 IS DISCONNECTED AND V2 = 0 FOR NPN TEST CIRCUIT REVERSE ALL POLARITIES.
0.2 0.04 0.06
0.4 0.6 0.2 1 IC, COLLECTOR CURRENT (AMP)
2
4
Figure 1. Switching Times Test Circuit
Figure 2. Switching Times
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters can and do vary in different applications. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.
2
Motorola Bipolar Power Transistor Device Data
MJD112 MJD117
r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 0.01 0.01 D = 0.5 0.2 0.1 0.05 0.01 SINGLE PULSE RJC(t) = r(t) RJC RJC = 6.25C/W D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) JC(t) P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
0.02 0.03
0.05
0.1
0.2 0.3
0.5
1 23 5 10 t, TIME OR PULSE WIDTH (ms)
20
30
50
100
200 300
500
1000
Figure 3. Thermal Response
ACTIVE-REGION SAFE-OPERATING AREA
TA TC 2.5 25 500 s 1 ms 5 ms dc BONDING WIRE LIMITED THERMAL LIMIT SECOND BREAKDOWN LIMIT TJ = 150C CURVES APPLY BELOW RATED VCEO 2 3 5 7 10 20 30 50 70 100 200 PD, POWER DISSIPATION (WATTS) 100 s
IC, COLLECTOR CURRENT (AMP)
10 7 5 3 2 1 0.7 0.5 0.3 0.2 0.1
2 20
1.5 15 TA SURFACE MOUNT TC
1 10
0.5
5
0
0
25
50
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
75 100 T, TEMPERATURE (C)
125
150
Figure 4. Maximum Rated Forward Biased Safe Operating Area
Figure 5. Power Derating
There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figures 5 and 6 is based on T J(pk) = 150_C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided T J(pk) < 150_C. T J(pk) may be calculated from the data in Figure 4. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown.
200 TC = 25C C, CAPACITANCE (pF) 100 70 50 Cob 30 Cib 20 PNP NPN 10 0.04 0.06 0.1 0.2 0.4 0.6 1 2 4 6 10 20 40
VR, REVERSE VOLTAGE (VOLTS)
Figure 6. Capacitance Motorola Bipolar Power Transistor Device Data 3
MJD112 MJD117
TYPICAL ELECTRICAL CHARACTERISTICS
NPN MJD112
6k TJ = 125C 4k hFE , DC CURRENT GAIN hFE , DC CURRENT GAIN 3k 2k 25C VCE = 3 V 4k 3k 2k 25C 6k TC = 125C VCE = 3 V
PNP MJD117
1k 800 600 400 300 0.04 0.06
- 55C
1k 800 - 55C 600 400 300 0.04 0.06
0.1
0.4 0.6 1 0.2 IC, COLLECTOR CURRENT (AMP)
2
4
0.1
0.2 0.4 0.6 1 IC, COLLECTOR CURRENT (AMP)
2
4
Figure 7. DC Current Gain
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
TJ = 125C 3 IC = 0.5 A 2.6 2.2 1.8 1.4 1 0.6 0.1 0.2 0.5 1 2 5 10 20 50 100
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
3.4
3.4 3 2.6 2.2 1.8 1.4 1 0.6 0.1 0.2 0.5 1 2 5 10 20 50 100 IC = 0.5 A 1A 2A 4A TJ = 125C
1A
2A
4A
IB, BASE CURRENT (mA)
IB, BASE CURRENT (mA)
Figure 8. Collector Saturation Region
2.2 TJ = 25C 1.8 V, VOLTAGE (VOLTS) VBE(sat) @ IC/IB = 250 V, VOLTAGE (VOLTS)
2.2 TJ = 25C 1.8 VBE(sat) @ IC/IB = 250
1.4
VBE @ VCE = 3 V
1.4
VBE @ VCE = 3 V
1 VCE(sat) @ IC/IB = 250 0.6
1 VCE(sat) @ IC/IB = 250 0.6
0.2 0.04 0.06
0.1
0.2
0.4
0.6
1
2
4
0.2 0.04 0.06
0.1
0.2
0.4
0.6
1
2
4
IC, COLLECTOR CURRENT (AMP)
IC, COLLECTOR CURRENT (AMP)
Figure 9. "On Voltages 4 Motorola Bipolar Power Transistor Device Data
MJD112 MJD117
NPN MJD112
+ 0.8 0 - 0.8 25C TO 150C - 1.6 - 2.4 - 3.2 -4 VC FOR VBE *VC FOR VCE(sat) - 55C TO 25C 25C TO 150C - 55C TO 25C 2 4 *APPLIED FOR IC/IB < hFE/3 + 0.8 0 - 0.8 - 1.6 - 2.4 25C TO 150C - 3.2 -4 VB FOR VBE - 55C TO 25C *VC FOR VCE(sat) - 55C TO 25C *APPLIES FOR IC/IB < hFE/3 25C TO 150C
PNP MJD117
V, TEMPERATURE COEFFICIENTS (mV/C)
V, TEMPERATURE COEFFICIENTS (mV/C)
- 4.8 0.04 0.06
0.1
0.2 0.4 0.6 1 IC, COLLECTOR CURRENT (AMP)
- 4.8 0.04 0.06
0.1
0.2 0.4 0.6 1 IC, COLLECTOR CURRENT (AMP)
2
4
Figure 10. Temperature Coefficients
105 IC, COLLECTOR CURRENT ( A) IC, COLLECTOR CURRENT ( A) 104 103 102 TJ = 150C 101 100 100C REVERSE FORWARD
105 104 103 102 101 100 TJ = 150C 100C 25C - 1.2 - 1.4 REVERSE FORWARD
VCE = 30 V
VCE = 30 V
25C 10-1 - 0.6 - 0.4 - 0.2 0 + 0.2 + 0.4 + 0.6 + 0.8 + 1 VBE, BASE-EMITTER VOLTAGE (VOLTS)
+ 1.2 + 1.4
10-1 0 - 0.2 - 0.4 - 0.6 - 0.8 - 1 + 0.6 + 0.4 + 0.2 VBE, BASE-EMITTER VOLTAGE (VOLTS)
Figure 11. Collector Cut-Off Region
PNP
COLLECTOR
NPN
COLLECTOR
BASE
BASE
8k
120
8k
120
EMITTER
EMITTER
Figure 12. Darlington Schematic
Motorola Bipolar Power Transistor Device Data
5
MJD112 MJD117
PACKAGE DIMENSIONS
-T- B V R
4
SEATING PLANE
C E
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. INCHES MIN MAX 0.235 0.250 0.250 0.265 0.086 0.094 0.027 0.035 0.033 0.040 0.037 0.047 0.180 BSC 0.034 0.040 0.018 0.023 0.102 0.114 0.090 BSC 0.175 0.215 0.020 0.050 0.020 --- 0.030 0.050 0.138 --- MILLIMETERS MIN MAX 5.97 6.35 6.35 6.73 2.19 2.38 0.69 0.88 0.84 1.01 0.94 1.19 4.58 BSC 0.87 1.01 0.46 0.58 2.60 2.89 2.29 BSC 4.45 5.46 0.51 1.27 0.51 --- 0.77 1.27 3.51 ---
S
1 2 3
A K F L D G
2 PL
Z U
J H 0.13 (0.005) T
DIM A B C D E F G H J K L R S U V Z
M
STYLE 1: PIN 1. 2. 3. 4.
BASE COLLECTOR EMITTER COLLECTOR
CASE 369A-13 ISSUE W
B V R
4
C E
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. DIM A B C D E F G H J K R S V INCHES MIN MAX 0.235 0.250 0.250 0.265 0.086 0.094 0.027 0.035 0.033 0.040 0.037 0.047 0.090 BSC 0.034 0.040 0.018 0.023 0.350 0.380 0.175 0.215 0.050 0.090 0.030 0.050 MILLIMETERS MIN MAX 5.97 6.35 6.35 6.73 2.19 2.38 0.69 0.88 0.84 1.01 0.94 1.19 2.29 BSC 0.87 1.01 0.46 0.58 8.89 9.65 4.45 5.46 1.27 2.28 0.77 1.27
A
1 2 3
S -T-
SEATING PLANE
K
F D G
3 PL M
J H 0.13 (0.005) T
STYLE 1: PIN 1. 2. 3. 4.
BASE COLLECTOR EMITTER COLLECTOR
CASE 369-07 ISSUE K
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6
Motorola Bipolar Power Transistor Device Data
*MJD112/D*
MJD112/D

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